Abstract: The gate-all-around nanosheet (NS) field effect transistors (FETs) are hailed as the most promising candidate for scaling the CMOS technology beyond the 5-nm technology node owing to their ...
Benchmarking the output power (P out) as a function of frequency for GaN-on-silicon. To the best of the authors’ knowledge, ...
Abstract: Physics-based analytical model of 2-D electron gas (2DEG) density is proposed for p-GaN/AlGaN/GaN heterostructure considering the thermionic field emission (TFE) of holes through gate ...
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