Semiconductor Engineering

Simulations of Silicon Spin Qubits Based on a GAAFET (Teikyo U., Riken)

A new technical paper, “Device/circuit simulations of silicon spin qubits based on a gate-all-around transistor,” was ...
EDN

Ferroelectric gates make transistors nonvolatile

PORTLAND, Ore. — Electronics devices using ferroelectric transistors would turn on instantly without the need to boot from flash or hard-disk memories. Such ferroelectric transistors would likely use ...
AZoNano

Using Graphene Field Effect Transistors in Biosensors

A field effect transistor (FET) is a carrier device with three terminals: source, drain, and gate. In FETs, an electric field can be applied at the terminal of the gate, modifying the conductive ...
Semiconductor Engineering

Improving Gate All Around Transistor Performance Using Virtual Process Window Exploration

As transistor sizes shrink, short channel effects make it more difficult for transistor gates to turn a transistor ON and OFF [1]. One method to overcome this problem is to move away from planar ...
Science Daily

Flexing the power of a conductive polymer

Electronic gates are implemented using transistors, and reconfiguring them (such as changing from an AND gate to a NOR gate) requires invasive modification, such as dismantling, which is usually too ...